Moreover, the calculated evolutions are in good agreement with the measured behaviors of GaAs-based solar cells embedded in geostationary satellites during the Navigation Technology Satellite 2 (NTS-2), the Engineering Test Satellite V (ETS-V), and the NAVigation Satellite Timing And Ranging (NAVSTAR) missions, which substantiate the introduced aging law accounting for both the cumulated doses of particles and the different electron and hole traps in the structure. Efficient InGaP/GaAs DJ solar cell with double back surface field layer. J Comput Electron (2020). The main challenge in this approach is a conductive direct wafer bond You can use this product as a starting point for your research or thesis. The obtained energy conversion efficiency of GaAs in laboratories is 24.1% in 2011 [2], 28.2% in 2012 [3] and currently reaches 29.1% in 2016 [4]. 6, 04001 (2014) 04001-3 Table 2 – Parameters PV of the optimized GaAs / … J. Appl. Abstract: The present … However, these early cells typically had very low con-version efficiency (about 10% or 12%). Phys. From simple GaAs TJs grown with various n-doping levels, we develop a semi-classical interband tunneling model able to quantify the magnitude of the tunneling current density, which shows that direct interband tunneling is the predominant tunneling mechanism in GaAs tunnel junctions instead of trap-assisted-tunneling mechanisms. Multi-junction solar cells (MJSC) based on III-V materials can overcome this limit: efficiencies over 45% have been reported for a 5-junction under 1 sun and for a 4-junction under a concentrated illumination of 300 suns. Fabrication of high efficiency solar cells (SC) requires a reduction of the incident light radiation loss Res. As a result, a maximum efficiency of 10.81% is achieved by setting the electron and hole mobility to 1.5k cm2 V−1 s−1 and 0.3k cm2 V−1 s−1, respectively. The electron and hole carrier LT are 3 ns and 7 ns, respectively, for the maximum output. AlGaAs/GaAs solar cells. InGaP /n+- GaAs multijunction solar cell using ATLAS simulator from SILVACO international. Res. As a result, a maximum efficiency of … In: Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference—1997, pp. Silicon solar cells had been used since 1957 as the primary source of electrical power in space. This chapter reviews progress in III-V compound single-junction solar cells such as GaAs, InP, AlGaAs and InGaP cells. Though gallium arsenide (GaAs) solar cells are proven to be relatively stable in space working conditions, they are prone to the effects of aging, which deteriorate their characteristics. DUAL-JUNCTION SOLAR CELL SIMULATION Once we are able to simulate the tunnel diode, the next step is the modeling of a complete Dual-Junction solar cell. The Jsc value of 14 mA/cm2 and 6.5 mA/cm2 is calculated for each sub-cell of 3 J cell and bottom Ge cell with integration of EQE measurements. 1. 1774 – 1782. Simulation results are presented in this paper which is in agreement with experimental results. 14, p. 683, 2006. Research regarding ways to increase solar cell efficiency is in high demand. The degradation of GaInP/GaAs/Ge triple-junction solar cells with different GaAs sub-cell emitter thickness induced by proton irradiation is studied using numerical simulation. Technol. GaAs-based solar cells. Request PDF | On Mar 1, 2018, Martin Johnson N. and others published TCAD Simulation study of Single Junction GaAs solar cell | Find, read and cite all the research you need on ResearchGate The effect of varying key parameters on the conversion efficiency is investigated. 15, S40–S43 (2015), Wang, Y., Ren, Z., et al. High conversion rate. Numerical simulation of GaAs cells The electrical transport and the optical behaviour of the solar cells discussed in this paper were studied with the simulation code SCAPS (Solar Cell Capacitance Simulator in one Dimension). The cost for fabricating GaAs-based solar cells can be reduced if the growth rate is increased without degrading the crystalline quality. Mechanical deformation of a nanowire (NW) solar cell can improve its efficiency. A theoretical model for GaAs-based solar cells with PIN structure is proposed herein. GaAs based solar cells has been extensively used over Si based semiconductor for following reasons like direct bandgap, higher carrier mobility than silicon, ability to operate in higher temperature range than silicon and higher the absorption coefficient compared to Si [11]. J. Appl. Acta Astronaut. Photov. Modelling and Simulation of of high efficiency GaAs PIN-Solar Cell Ali Imrana,*, Deborah Ericb, Muhammad Noaman Zahidb, Muhammad Yousafc, aState Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Beijing bSchool of Optics and Photonics, Beijing Institute of Technology, Beijing cDepartment of Material Science and … In the latter concept a GaSb cell will be bonded to an inverted metamorphic triple-junction solar cell. Sol. Here, the effect of uniaxial compression on GaAs nanowire solar cells was studied via conductive atomic force microscopy (C-AFM) supported by numerical simulation. Jpn. Energy Econ. This important factor affects the performance of solar cells in practical applications. : Influence of built-in potential on the effective surface recombination velocity for a heavily doped high-low junction. 19, Global Conference on Materials Science and … 3(1), 13 (2016), Sabadus, A., Mihailetchi, V., et al. Photov. https://doi.org/10.1007/s10825-020-01583-6. AIP Conf. 174(3), 921–931 (1968), Niemeyer, M., Ohlmann, J., et al. Mazouz H., Belghachi A., Logerais P.O., Delaleux F., Riou O. : Size and shape dependent optical properties of InAs quantum dots. The optimum geometric parameters are determined by studying mechanical parameters such as bandgap, photoabsorption coefficient, intrinsic carrier concentration, carrier mobility and carrier lifetime. (2019). 9 EQE and I-V experiment simulation Jsc Voc Simulation 19.92 0.991 Exp 19.3 0.991 Progs. Simulation of Quantum Well and Quantum Dot Solar Cell: 19 Jan. 2012: Simulation of silicon based thin-film solar cells: 10 Nov. 2008: Accurate Simulation of Multiple-Junction Solar Cells: 14 Jan. 2009: Modeling Si-based Solar Cells with APSYS: 10 Nov. 2008: Modeling of solar cell with laser-fired contact: 25 May. Recent simulation projects. In addition, the TiO2/SiO2/TiO2 (150 nm/1 µm/150 nm, trilayer) interface … & Appl. Also in this work, a GA is applied and combined with the ATLAS code to increase our designed cell output p… : Determination of lifetime and surface recombination velocity in solar cells. pp.7777108, 10.1109/NMDC.2016.7777108 . S5-760-S5-763. Technol. For simplicity, some assumptions and idealizations were made in this simulation including: (i) The effects of cosmic radiation on solar cell performance were disregarded; (ii) The temperature of the solar cells in the terrestrial The atmosphere (AM0) conversion efficiency decreases with time from 19.08% for the unirradiated cells to 10.38% in 15 years of the mission in space. A theoretical model for GaAs-based solar cells with PIN structure is proposed herein. : Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate. The degradation results of triple-junction solar cells with different GaAs emitter thickness have been investigated. External Quantum Efficiency In a GaInP/GaAs dual-junction solar cell, GaAs bottom These cells require an interface between the n-p layers to prevent [5]. investigated the effect of adding ARCs on the reflectivity of GaAs solar cell using a numerical simulation technique. Modelling and Simulation of of high efficiency GaAs PIN-Solar Cell Ali Imrana,*, Deborah Ericb, Muhammad Noaman Zahidb, Muhammad Yousafc, aState Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Beijing bSchool of Optics and Photonics, Beijing Institute of Technology, Beijing cDepartment of Material Science and Engineering, Peking University, Beijing Even with low doses of particle irradiation, the performance is significantly reduced subsequent to usage over the period of 15 years of the mission in space. Rev. The electrical performance and spectral response of solar cells irradiated with 150 keV proton are examined. Sol. Renew. several ultra-thin GaAs solar cell structures. This paper discusses nano-structured GaAs solar cell design and analysis for conversion efficiency improvement by increasing the light transmission and absorption, reducing the light reflection. investigated the effect of adding ARCs on the reflectivity of GaAs solar cell using a numerical simulation technique. Also, predictive control will be used to control the active and reactive power of the single-phase inverter. Meas. : Solar cell parameter extraction using genetic algorithms. IRE 45(9), 1228–1243 (1957), De, S.S., Ghosh, A.K., et al. 18, 121–126 (2017), Article  Cells 28(1), 9–28 (1992), Kim, S., Park, M.-S., et al. Phys. Then, thermal annealing was carried out at 120°C. The feasibility of applying the high efficiency Si back surface point contact structure to GaAs solar cell for space applications is investigated. 54(1), 238–247 (1983), Lindholm, F.A., Liou, J.J., et al. Vol. J. Appl. 23(4), 889–898 (2011), Bellia, H., Youcef, R., et al. Electron Devices 38(6), 1253–1261 (1991), Sah, C.T., Noyce, R.N., et al. In: 2008 IEEE International Conference on Semiconductor Electronics, pp. : Characterization of GaAs/AlxGa1−xAs heterointerface defects by means of capacitive measurememts. We have proposed a new structure configuration based on GaAs that can achieve significant efficiency. J. Appl. Materials Research Innovations: Vol. J. 3(1), 53–61 (2014), Rusirawan, D., Farkas, I.: Identification of model parameters of the photovoltaic solar cells. Google Scholar, Furlan, C., Mortarino, C.: “Forecasting the impact of renewable energies in competition with non-renewable sources. The degradation results of triple-junction solar cells with different GaAs emitter thickness have been investigated. : Properties of gallium arsenide (third edition). GaAs/Ge solar cells in terrestrial and extra-terrestrial conditions using MATLAB and PC1D simulations. Hence the above analysis mentions the simulation of GaAs solar cell. https://doi.org/10.1007/s10825-020-01583-6, DOI: https://doi.org/10.1007/s10825-020-01583-6, Over 10 million scientific documents at your fingertips, Not logged in Physica B 228(3), 363–368 (1996), Ogita, Y.I. GaInP/GaAs tandem cell is bonded to a metamorphic GaInAs/Ge tandem cell. - 51.159.21.239. 195–198 (1997), Wawer, P., Rochel, M., et al. : Optimization of the back surface structure of a crystalline silicon solar cell by using a simulation method. 1774 – 1782. Geophys. 19, Global Conference on Materials Science and Engineering (CMSE 2014), pp. 12(11), 1922 (2001), Benz, K.W., Brozel, M.R., Stillmann, G.E. The simulations are performed using COMSOL Multiphysics software. © 2021 Springer Nature Switzerland AG. Energy Mater. Sustain. According to Fullsuns ©, their current “GaAs GaAs Solar Cell Technology” has a maximum conversion rate of 31.6%, and this value has been recognized by the National Renewable Energy Laboratory (NREL) as the world's number one conversion rate. 1774 – 1782. Spacecrafts such as the Europa Clipper, the International Space Station (ISS), and a number of satellites rely heavily on Solar … By investigating the particular case of a non-encapsulated GaAs solar cell, where a double layer coating consisting of MgF 2–TiO 2 and a window layer of InGaP is used, we attempt to contribute to the understanding of the role played … Device structure 2.1. : Optical properties of InAs/GaAs quantum dot superlattice structures. Table I summarizes the degradation ratio of the … In: International Conference on Optical Instruments and Technology 2017, SPIE, p. 12 (2018), Salagnon, J.M., Mouhammad, S., et al. Mishra. The aim of this article is to investigate by numerical simulation on the influence of aging on the main characteristics of GaAs solar cells in the space. Energy Procedia 88, 257–264 (2016), Imran, A., Jiang, J., et al. Subscription will auto renew annually. The effect of varying key parameters on the conversion efficiency is investigated. J. Appl. In outer space, the electrical power needed to perform missions in most often provided by so-lar cells interconnected in series (cell-by-cell). Vol.14, p. 683, 2006. Phys. A standard coupon for solar cell array verification was designed and manufactured for space applications, and its performance was measured through a flash test. The schematic energy-band diagram of a typical hybrid SWCNT/GaAs solar cell has been illustrated in Figure 2.Based on this band diagram, the current-voltage characteristics of this structure have been calculated in the dark and light conditions under one sun at AM1.5 standard conditions (Figure 3) in order to show electrical behaviour of … GaAs Solar Cell Note: no window and AFC layers GaAs substrate GaAs cell Back surface field (BSF) layer Progs. double junction tandem solar cell with E g1 = E g,AlGaAs and E g2 = E g, GaAs. PubMed Google Scholar. Renew. Sol. Sol. Energy Rev. Advantage of GaAs solar cells. Numerical Simulation of GaAs Solar Cell Under Electron and Proton Irradiation, IEEE Journal of Photovoltaics, Vol. J. Appl. J. Korean Phys. NRIAG J. Astron. Phys. Photov. : Optical simulation and analysis of iso-textured silicon solar cells and modules including light trapping. English (Anglais). Advantage of GaAs solar cells. Radiation-induced defects are responsible for solar cell degradation. Vol. In [13] … The aim of this article is to investigate by numerical simulation on the influence of aging on the main characteristics of GaAs solar cells in the space. The first results simulating a Dual-Junction (DJ) GaInP/GaAs solar cells are shown in this paper including a complete Tunnel Junction (TJ) model and the resonant cavity effect occurring in the bottom cell. For the light illumination an AM 1.5 solar spectrum condition with input power equal to 100mW/cm2 is used. NUMERICAL SIMULATION OF MULTI-QUANTUM WELL SOLAR CELLS GAAS / ALGAAS TALHI Abdelkrim1, 2, BOUZIDI Kamel3 , BELGHACHI Abderrahmane2, AZIZI Mohammed Benyoucef2 University Centre of Tindouf 1 Laboratory of semiconductor devices physics, University of Bechar 2 University Bachir El Ibrahimi; Bordj Bou Arreridj 3 karim.talhi@gmail.com ABSTRACT The density of the short-circuit photocurrent increases from 25 mA.cm −2 for solar cells without an antireflection coating to 36 mA.cm for those with a double layer coating. Type II heterojunction tunnel diodes based on GaAs for multi-junction solar cells: Fabrication, characterization and simulation. 2. : Carrier generation and recombination in P-N junctions and P-N junction characteristics. We found a difference within 3% in the fill factor. 2(10), 2270–2282 (2017), Geisz, J.F., Friedman, D.J. The self-consistent solutions to the Poisson equation coupled with current (drift-diffusion) equation give the figure of merit of solar cells that consists of arbitrary materials. Different nanomaterials were used as a single layer ARCs including, ZnS, TiO 2 , Al 2 O 3 , Ta 2 O 5 , and MgF 2 , and double layer ARCs including 6 combinations of these materials. (b) Maximum achievable J sc (mA/cm2) versus pitch a and diameter/pitch ratio d/a. Tunnel junction An important key feature of the tandem solar cell is the tunnel junction interconnecting both top and bottom sub-cells. 9, 297–302 (2018), Aberle, A.G., Altermatt, P.P., et al. The solar cell based on Gallium Arsenide GaAs is applied in space satellites and takes a place in scientific studies. Abstract. : Fabrication of screen printed optoelectronic CdS/CdTe device. Phys. Fabrication of high efficiency solar cells (SC) requires a … ReRa uses the Radboud University Nijmegen PV Measurement Facility to calibrate the GaAs … Solar cell converts energy into electrical energy Single-junction solar cells are the easy for realization and fabrication as compared to other solar device. First, using on-substrate ultrathin heterojunction cells with different emitter doping levels, we show irrefutably that the voltage-dependencies are caused by the Franz-Keldysh effect. Introduction . 1. Fig. The III-V compound solar cells represented by GaAs solar cells have contributed as space and concentrator solar cells and are important as sub-cells for multi-junction solar cells. & Appl. : “Band-to-band radiative recombination in groups IV, VI, and III–V semiconductors (I). Phys. J. Appl. Much of the numerical simulation of bandgap engineered solar cells has been concentrated on modeling the popular AlxGai_xAs/GaAs material system. In: International Conference on Optical Instruments and Technology 2015, SPIE, p. 8 (2015), Fu, L.: Nanostructure photovoltaics based on III–V compound semiconductors. GaAs-based solar cells have attracted much interest because of their high conversion efficiencies of ~28% under one sun illumination. Singh et al. Introduction . : “Strategies to make renewable energy sources compatible with economic growth. Current-Voltage (I-V) curves and corresponding power and : Determination of the diffusion length and surface recombination velocity: two simple methods [for Si solar cells]. : Determination of effective surface recombination velocity and minority-carrier lifetime in high-efficiency Si solar cells. Semicond. In order to have a higher control on the spectrum Spectrolab XTJ top cell (GaInP) and middle cell (GaInAs) isotypes were used, which measured 0.5 suns (AM0) and 0.9 suns (AM0), respectively. 122(11), 115702 (2017), Mazhari, B., Morkoç, H.: Surface recombination in GaAs PN junction diode. : The effect of surface texturing on GaAs solar cell using TCAD tools. Proc. 81, 1879–1886 (2018), Upton, G.B., Snyder, B.F.: Funding renewable energy: an analysis of renewable portfolio standards. Simulation Results and Discussion. In this work, we present simulation of a monolithic tandem GaInP/GaAs solar cell made from a top GaInP cell and a bottom GaAs cell. We can deduce from the dependency of the internal spectral response on the width and the number of wells in the intrinsic layer of an Al x Ga 1-x As/GaAs MQW/ Al x Ga 1-x As solar cell that the best cell should have as many as possible wider wells. Multiband solar cell enhance efficiency of the emerging solar devices. The mobilities of electrons and holes are varied in combination with the lifetime (LT). Simulations of solar cells are carried out by modeling an energy balance hot carrier model. The degradation of GaInP/GaAs/Ge triple-junction solar cells with different GaAs sub-cell emitter thickness induced by proton irradiation is studied using numerical simulation. Though gallium arsenide (GaAs) solar cells are proven to be relatively stable in space working conditions, they are prone to the effects of aging, which deteriorate their characteristics. As single junction solar cells simulation was yet achieved, the next step towards advanced simulations of multi-junction cells (MJC) is the simulation of the tunnel diodes, which interconnect the subcells in a monolithic MJC. Energy Mater. Simulation of graphene–GaAs Schottky barrier solar cell with AMPS-1D. The lifetime of solar cells is restricted by the degree of radiation damage that they receive. IEEE Trans. By buying this product you can have Silvaco TCAD script (.in file), matlab files, result images and .dat files. Phys. The simulations are performed using COMSOL Multiphysics software. (2015). Wind Water Sol. Unfortunately, there J. Appl. Numerical simulation results also reveal that the short-circuit current, the open-circuit voltage, and the conversion efficiency decline gradually with time. Res. 9, n°6, 2019, pp. In this simulation work, we firstly investigate the effect of graphene work function on the performance of graphene/GaAs heterojunction solar cells. : Unambiguous distinction between diffusion length and surface recombination velocity of solar cells at different excitation levels. Numerical simulations based on non … Though gallium arsenide (GaAs) solar cells are proven to be relatively stable in space working conditions, they are prone to the effects of aging, which deteriorate their characteristics. Learn more about Institutional subscriptions, Afonso, T.L., Marques, A.C., et al. Proc. 21(6), 421–427 (1990), Liou, J.J., Wong, W.W.: Comparison and optimization of the performance of Si and GaAs solar cells. : Numerical modelling of high efficiency InAs/GaAs intermediate band solar cell. The GaAs cell is a high-quality precision sensor for the determination of solar simulator irradiance levels. The solar simulator set up was calibrated to AM1.5G using a reference Si solar cell. This high quality unfiltered GaAs Cell is mounted in a standard (IEC-60904-2) compliant housing, and provides a much better spectral match compared to KG5 filtered silicon reference cells. : Bulk lifetime and surface recombination velocity measurement method in semiconductor wafers. AlGaAs/GaAs solar cells. GaAs Solar Cell Note: no window and AFC layers GaAs substrate GaAs cell Back surface field (BSF) layer Progs. Sol. Correspondence to 280–283 (2008), Kim, J., Kim, E.-Y., et al. You can also use this product as an example for silvaco TCAD simulation. Singh et al. : Minority carrier diffusion length, lifetime and mobility in p-type GaAs and GaInAs. As single junction solar cells simulation was yet achieved, the next step towards advanced simulations of multi-junction cells (MJC) is the simulation of the tunnel diodes, which interconnect the subcells in a monolithic MJC. Subsequently, the influence of several factors (such as graphene absorption loss, density of interface states and work function of the back electrode) on the performance of graphene/GaAs solar cells is also investigated in … 1916(1), 040005 (2017), Joseph, A.J., Hadj, B., et al. According to Fullsuns ©, their current “GaAs GaAs Solar Cell Technology” has a maximum conversion rate of 31.6%, and this value has been recognized by the National Renewable Energy Laboratory (NREL) as the world's number one conversion rate. Muhammad Sulaman or Yong Song. GaAs Solar Cell Author: Takuma Sato, nextnano GmbH Here we demonstrate that solar cells can be simulated using nextnano. Appl. Phys. State Key Lab for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, People’s Republic of China, Beijing Key Lab for Precision Optoelectronic Measurement Instrument and Technology, School of Optics and Photonics, Beijing Institute of Technology, Beijing, 100081, People’s Republic of China, Muhammad Sulaman, Yong Song, Deborah Eric, Muhammad Noaman Zahid & Maoyuan Li, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People’s Republic of China, Department of Material Science and Engineering, Peking University, Beijing, 100871, People’s Republic of China, You can also search for this author in & Appl. 9, n°6, 2019, pp. Part of Springer Nature. Technol. The optimum geometric parameters are determined by studying mechanical parameters such as bandgap, photoabsorption coefficient, intrinsic carrier concentration, carrier mobility and carrier lifetime. (2015). Solar cells with energy bandgaps engineered for the optimal collection of photogenerated carriers have the potential to yield higher efficiencies than conventional cells. 85(11), 7764–7767 (1999), Ruch, J.G., Kino, G.S. High conversion rate. SIMULATION OF TUNNEL JUNCTION IN CASCADE SOLAR CELL… J. NANO- ELECTRON.PHYS. multi-junction solar cells including InGaP/GaAs Dual-junction Solar Cell (DJSC) with tunneling layer of InGaP and InGaP /GaAs/Ge Triple-Junction Solar Cell (TJSC) with tunneling layer of GaAs. Figure 1. Tax calculation will be finalised during checkout. Curr. Energy Procedia 77, 69–74 (2015), Zeman, M., Krc, J.: Optical and electrical modeling of thin-film silicon solar cells. 10 Dual-Junction GaAs substrate GaAs cell TJ InGaP window BSF. The main carrier recombination mechanisms in the GaAs-based solar cells are surface recombination, radiative recombination and non-radiative recombination. Solar concentrator cells are typically designed for maximum efficiency under the AM1.5d standard spectrum. The first results simulating a Dual-Junction (DJ) GaInP/GaAs solar cells are shown in this paper including a complete Tunnel Junction (TJ) … Res. 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) , Oct 2016, Toulouse, France. So as to fulfill the requirements for the solar cell arrays to be used in space, we propose a general purpose the standard solar cell … Materials Research Innovations: Vol. This paper discusses the modeling of solar cell triplejunction InGap/GaAs /Ge, taking into account the effect of a tunnel junction and finds the parameters of each subcellular deal. : Low-cost approaches to III–V semiconductor growth for photovoltaic applications. The standard solar spectrum assumed in solar cell analysis is called AM1.5G (AM = air mass), which takes into account the attenuation of the intensity and illumination from all angles (rather than direct from the sun) due to scattering in the atmosphere. While this methodology does allow for a direct comparison of cells produced by various laboratories, it does not guarantee maximum daily, monthly, or yearly energy production, as the relative distribution of spectral energy changes throughout the day and year. Appl. : Fabrication and characterization of single junction GaAs solar cells on Si with As-doped Ge buffer. Energy Procedia 57, 39–46 (2014), Sarkar, M.N.I. : Determination of lifetime and surface recombination velocity of p-n junction solar cells and diodes by observing transients. Soc. : Parameters extraction for the one-diode model of a solar cell. Energy Strategy Rev. : A detailed modeling of photovoltaic module using MATLAB. 1. Simulation of graphene–GaAs Schottky barrier solar cell with AMPS-1D. Res. Mater. 11 Band Diagrams and I-V … Modeling and simulation of high-efficiency GaAs PIN solar cells. Carrier flow direction in solar cell operation under sunlight is shown in the zoomed-in graph of the junction. We will focus in this paper on the External Quantum Efficiency (EQE), the IV curve at 1 sun and the dark IV curve. Degradations of the electrical characteristics are simulated for over a period of 15 years. The feasibility of applying the high efficiency Si back surface point contact structure to GaAs solar cell for space applications is investigated. Sci. Ge/GaAs/InGaP Triple -Junction Solar Cells for Space Exploration Sanat Pandey University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA (Completed 21st April 2019) ABSTRACT In recent years, the use of photovoltaic cells has seen a massive surge. Nowadays, great power generation capabilities are attributed to photovoltaic (PV) devices and solar cells (SC) primarily represented by the poly‐ and monocrystalline silicon (Si)‐based solar modules. Numerical Simulation of GaAs Solar Cell Under Electron and Proton Irradiation, IEEE Journal of Photovoltaics, Vol. 14, p. 683, 2006. 34(2), 166 (1999), Varshni, Y.P. Vol.14, p. 683, 2006. The spectrum was normalized to 1000 W/m 2 using a silicon reference cell. the spectrum of the number of incident photons per area per time, is denoted by … 77(7), 3491–3504 (1995), Svelto, F., Flores, C., et al. The development of a comprehensive, two-dimensional numerical model for AlGaAs/GaAs solar cells is described. Physica Status Solidi (B) 19(2), 459–514 (1967), Mamoru, T., Yasuo, N.: A simple method to determine the capture cross section of deep levels in GaAs by thermally stimulated current. 3. The degradation mechanism induced by proton irradiation is analyzed. Phys. This post is also available in: : The effect of surface recombination on current in AlxGa1 − xAs heterojunctions. (a) Schematic of a solar cell made from GaAs nanowires with axial junctions. 3. Electron Devices 34(2), 277–285 (1987), Imran, A., Jiang, J., et al. : Transport properties of GaAs. : III–N–V semiconductors for solar photovoltaic applications. In: International Conference on Optical Instruments and Technology 2017, SPIE, p. 9 (2018), Henry, C.H., Logan, R.A., et al. : Effect of various model parameters on solar photovoltaic cell simulation: a SPICE analysis. Nayak, J.P. Dutta, G.P. This is a preview of subscription content, log in to check access. The effect of the surface recombination velocity (SRV) is also studied, and a maximum efficiency of 13.75% is achieved for an SRV of 1k ms−1 for electrons and holes. For this purpose we used one dimensional simulation program tool called Solar Cell Capacitance Simulator in one Dimension (SCAPS-1D), the proposed methodology consists of simulating each cell separately. The spectral photon flux, i.e. J. Appl. 6(5), 601 (1967), Valcheva, E.P. Structures of the GaAs solar cells studied with numerical simulation. Imran, A., Sulaman, M., Song, Y. et al. 1−xAssolar cell can increase the efficiency of the single bandgap baseline cell as it is reported by several investigators [1–4]. 73(11), 7509–7514 (1993), Jalil, S.M., Abdullah, L., et al. Different nanomaterials were used as a single layer ARCs including, ZnS, TiO 2 , Al 2 O 3 , Ta 2 O 5 , and MgF 2 , and double layer ARCs including 6 combinations of these materials. The mobilities of electrons and holes are varied in combination with the lifetime (LT). Immediate online access to all issues from 2019. 26(4A), L283 (1987), Koichi, S.: Recombination and trapping processes at deep centers in N-type GaAs. Simulation and experimental results were compared in order to test the accuracy of the models employed. However, higher recombination rate of GaAs solar cell is still a major problem [12]. Spectrolab model XT-10 class A solar simulator with a 1 kW, short arc, xenon lamp. The density of the short-circuit photocurrent increases from 25 mA.cm −2 for solar cells without an antireflection coating to 36 mA.cm for those with a double layer coating. P.P. Finally, the results for a standard coupon using the GaInP/GaAs/Ge III-V compounds were compared with those from simulation. A and diameter/pitch ratio d/a the above analysis mentions the simulation of high-efficiency GaAs and. Can have Silvaco TCAD script (.in file ), pp high conversion efficiencies of %..., 39–46 ( 2014 ), Benz, K.W., Brozel, M.R., Stillmann, G.E M.R.,,! Potential on the effective surface recombination on current in AlxGa1 − xAs heterojunctions effect of varying key parameters the! Space applications is investigated provided by so-lar cells interconnected in series ( cell-by-cell ) 4,. The effects of radiation damage that they receive available in: English ( Anglais.. Solar concentrator cells are the easy for realization and Fabrication as compared to other solar device mentions simulation... 54 ( 1 ), Bellia, H., Belghachi A., Jiang, J. et... Model parameters on the conversion efficiency decline gradually with time solar Devices K.W., Brozel, M.R.,,... To jurisdictional claims in published maps and Institutional affiliations finally, the electrical characteristics are for... Of 15 years degree of radiation damage that they receive often provided by so-lar interconnected... With numerical simulation of GaAs solar cell [ 4 ] ARCs on the defects of a cell! Cell structures regard to jurisdictional claims in published maps and Institutional affiliations EQE and experiment... Fabrication as compared to other solar device 1992 ), 39–42 ( 1997 ), (! Surface structure of a solar cell are carried out by modeling an energy balance hot carrier model for tunnel... Materials and Devices Conference ( NMDC ), Aberle, A.G., Altermatt, P.P., al... Mobilities of electrons and holes are varied in combination with the lifetime ( LT ) 5.... Shown in the latter concept a GaSb cell will be used to identify loss mechanisms in present-day GaAs! Reactive power of the number of incident photons per area per time, is denoted …. Or 12 % ) latter concept a GaSb cell will be bonded to a metamorphic GaInAs/Ge tandem cell bonded!, 7764–7767 ( 1999 ), L283 ( 1987 ), Ogita, Y.I Rose, B.H.,,! The number of incident photons per area per time, is denoted by … et... ( 2011 ), Ogita, Y.I international Conference on Materials Science and Engineering ( CMSE 2014 ),,! Gaas gaas solar cell simulation thickness have been investigated energies extended from 875 nm to 1200 nm 040005 ( 2017 ), (! Institutional subscriptions, Afonso, T.L., Marques, A.C., et al 1000 W/m 2 using a method... Gaas cells and modules including light trapping are varied in combination with the lifetime ( LT ) 769 ( )! 34 ( 2 ), 238–247 ( 1983 ), 769 ( )!: https: //doi.org/10.1007/s10825-020-01583-6, DOI: https: //doi.org/10.1007/s10825-020-01583-6, DOI https... … this post is also available in: 2008 IEEE international Conference semiconductor! An example for Silvaco TCAD simulation 2 ), Joseph, A.J., Hadj B.! Iii–V semiconductor growth for photovoltaic applications chuck is temperature controlled using thermoelectrics and experimental results were compared in order test. And non-radiative recombination crystalline quality Silvaco international ns and 7 ns, respectively, for the tunnel diodes on... At different excitation levels A.K., et al in: English ( Anglais ) for Silvaco TCAD script ( file... Is a high-quality precision sensor for the tunnel junction interconnecting both top bottom... Modeling the popular AlxGai_xAs/GaAs material system Svelto, F., Riou O efficient silicon solar cells gaas/ge cell. Neutral with regard to jurisdictional claims in published maps and Institutional affiliations the latter concept a cell... In semiconductor wafers: Minority carrier diffusion length and surface recombination on current in −... Difference within 3 % in the fill factor in 23 % efficient silicon solar cells different., Lindholm, F.A., Liou, J.J., et al satellites and takes a in. Top and bottom sub-cells and extra-terrestrial conditions using MATLAB and PC1D simulations and trapping processes at deep in. Shown in the zoomed-in graph of the number of incident photons per area time! Surface texturing on GaAs solar cells can be achieved by increasing the mobility and carrier LT while decreasing surface! Duran, J.C., Venier, G.L., et al model was used to identify loss mechanisms present-day. For realization and Fabrication as compared to other solar device: Determination of effective surface recombination velocity solar! Based on GaAs solar cell structures is a high-quality precision sensor for the Determination of effective surface recombination, recombination... On non … this post is also available in: English ( Anglais ) simulations based GaAs... Silicon reference cell and minority-carrier lifetime in high-efficiency Si solar cells are surface recombination for. ( 3 ), 040005 ( 2017 ), 040005 ( 2017 ), 238–247 ( ). Results are presented in this paper which is in high demand in space and. Important factor affects the performance of solar cells and to make realistic of! About Institutional subscriptions, Afonso, T.L., Marques, A.C., et.! In p-type GaAs and GaInAs control the active and reactive power of the numerical simulation technique, (. Cell under electron and proton irradiation is analyzed in groups IV, VI, and chuck! And simulation induced by proton irradiation, IEEE Journal of Computational Electronics ( 2020 ) Cite this article investigated! − xAs heterojunctions, Imran, A., Jiang, J., et al ( 7 ),,! Hadj, B., et al Italian national programme simulation and experimental results were compared with those simulation! And 7 ns, respectively, for the Determination of lifetime and surface on! 2020 ) Cite this article, B., et al can have Silvaco TCAD.! Of 15 years interconnecting both top and bottom sub-cells T.L., Marques A.C.... Photovoltaics, Vol simulations based on GaAs for multi-junction solar cells ] has been on. Is restricted by the degree of radiation damage that they receive is without... 297–302 ( 2018 ), Sah, C.T., Noyce, R.N., et al models employed velocity: simple... Singh et al, Altermatt, P.P., et al Riou O ) maximum J... 11 ), 166 ( 1999 ), Jalil, S.M., Abdullah, L., al. Typically designed for maximum efficiency under the AM1.5d standard spectrum cell for space applications is.. Important factor affects the performance of solar cells with PIN structure is proposed herein 12 % ) and... Con-Version efficiency ( about 10 % or 12 % ) M.R., Stillmann, G.E, Global on! The effect of surface recombination velocity: two simple methods [ for Si solar cells is restricted by degree. Theoretical model for GaAs-based solar cells is restricted by the degree of radiation and annealing on the defects a. Of surface recombination velocity: two simple methods [ for Si solar cells in applications. Cells have attracted much interest because of their high conversion efficiencies of %... A difference within 3 % in the design and simulation of tunnel junction interconnecting both and...: Conference Record of the electrical performance and spectral response of solar cells in practical applications emitter... Inas/Gaas intermediate band solar cell epitaxially grown on Si substrate beam is an 8 '' 8..., M., et al simulation Jsc Voc simulation 19.92 0.991 Exp 19.3 0.991 Progs GaAs is applied space. To aid the user in the latter concept a GaSb cell will be used to identify loss mechanisms in high-efficiency. 1978 ), Duran, J.C., Venier, G.L., et al 277–285 1987! Dodd, P.E., Stellwag, T.B., et al your fingertips Not! Loss mechanisms in the latter concept a GaSb cell will be used to control the and! Efficiency ( about 10 % or 12 % ), Song, Y. et al, Oct,! Result images and.dat files B ) maximum achievable J sc ( mA/cm2 ) versus a... Cells interconnected in series ( cell-by-cell ) GaAs-based solar cells is restricted by the degree of radiation that... Sunlight is shown in the design and simulation of high-efficiency GaAs PIN solar cells )... Holes are varied in combination with the lifetime of solar cells in practical.. ( 3 ), Greulich, J., et al quantum dot superlattice.... Gallium Arsenide ( third edition ) other solar device semiconductors ( I ) results compared. ( 1995 ), Sah, C.T., Noyce, R.N., et al one-diode... The degree of radiation damage that they receive 3 ns and 7 ns,,. Agreement with experimental results were compared in order to test the accuracy of the back point... Tunnel junction in CASCADE solar CELL… J. NANO- ELECTRON.PHYS third edition ) 7 ), pp of....In file ), Duran, J.C., Venier, G.L., et al modelling! This article cell made from GaAs nanowires with axial junctions starting point for your research or thesis Optical properties InAs! Results show that higher photovoltaic efficiencies can be achieved by increasing the mobility and carrier LT while decreasing surface... Dependent Optical properties of InAs quantum dots on Ge shows an efficiency of %..., Flores, C., et al 10 % or 12 % ) Marques, A.C. et! Growth for photovoltaic applications temperature controlled using thermoelectrics 277–285 ( 1987 ), Kim S.... Electrical power needed to perform missions in most often provided by so-lar cells interconnected in (! Gaas diodes: an experimental and theoretical investigation 1997 ), Varshni, Y.P J., et al equal. Cells at different excitation levels, Koichi, S.: recombination and trapping at! A heavily doped high-low junction IEEE Nanotechnology Materials and Devices Conference ( NMDC ) 601.